r07ds0162ej0300 rev.3.00 page 1 of 7 mar 09, 2011 preliminary datasheet RJH60D3DPP-M0 silicon n channel igbt application: inverter features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 17 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (100 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 80 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 17 a, rg = 5 ? , ta = 25c) outline renesas package code: prss0003af-a (package name: to-220fl) 1 2 3 1. gate 2. collector 3. emitter c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c 35 a collector current tc = 100c i c 17 a collector peak current ic(peak) note1 70 a collector to emitter diode forward current i df 17 a collector to emitter diode forward peak current i df (peak) note1 70 a collector dissipation p c note2 30 w junction to case the rmal resistance (igbt) ? j-c note2 4.17 c/ w junction to case thermal resistance (diode) ? j-cd note2 6.0 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0162ej0300 rev.3.00 mar 09, 2011
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 2 of 7 mar 09, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.6 2.2 v i c = 17 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.0 ? v i c = 35 a, v ge = 15 v note3 input capacitance cies ? 900 ? pf output capacitance coes ? 60 ? pf reveres transfer capacitance cres ? 30 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 36 ? nc gate to emitter charge qge ? 6 ? nc gate to collector charge qgc ? 16 ? nc v ge = 15 v v ce = 300 v i c = 17 a t d(on) ? 30 ? ns t r ? 15 ? ns t d(off) ? 80 ? ns switching time t f ? 80 ? ns v cc = 300 v, v ge = 15 v i c = 17 a rg = 5 ? inductive load short circuit withstand time t sc 3.0 5.0 ? ? s v cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.3 1.7 v i f = 17 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 17 a di f /dt = 100 a/ ? s notes: 3. pulse test.
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 3 of 7 mar 09, 2011 main characteristics 0123 54 0 70 60 50 40 30 20 10 ig bt output characteristics ( typical) ig bt output characteristics ( typical) 0123 54 t c = 25 c pulse t est maximum dc collector current vs. case temperature 40 30 20 10 0 0 5 0 100 2 575 15 0125 175 0 5 0 100 2 575 15 0125 175 power dissipation vs. case temperature v ge = 8 v 10 v 12 v 15 v 18 v 18 v 40 30 20 10 0 turn-off soa 0 200 400 600 800 80 60 40 20 0 0 70 60 50 40 30 20 10 t c = 150 c pulse t est 10 v 12 v collector current i c (a) collector to emitter v oltage v ce (v) maximum safe operation area 1000 100 1 10 0.1 1 100 10 1000 tc = 25c single pulse 100 pw = 10 collector current i c (a) case t emperature t c (c) collector dissipation pc (w) case t emperature t c (c) collector current i c (a) collector to emitter v oltage v ce (v) collector current i c (a) collector to emitter v oltage v ce (v) collector current i c (a) collector to emitter v oltage v ce (v) v ge = 8 v 15 v
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 4 of 7 mar 09, 2011 0 70 60 50 40 30 20 10 0 70 60 50 40 30 20 10 transfer characteristics (typical) 0 48 12 1 6 v ce = 10 v pulse test 00 .5 1.01 .5 2.03 . 02.5 t c = 25 c t c = 25 c 150 c 150 c diode forward characteristics ( typical) v ge = 0 v pulse test gate to emitter v oltage v ge (v) collector to emitter satularion v oltage vs. gate to emitter v oltage ( typical) collector to emitter satularion v oltage vs. gate to emitter v oltage ( typical) collector to emitter satularion v oltage v ce(sat) (v) gate to emitter v oltage v ge (v) collector current i c (a) gate to emitter v oltage v ge (v) forward v oltege v f (v) forward current i f (a) 6 5 4 3 2 1 0 0 0 48 12 201 6 i c = 17 a 35 a t c = 150 c pulse t est 6 5 4 3 2 1 0 0 48 12 201 6 i c = 17 a 35 a t c = 25 c pulse t est collector to emitter satularion v oltage v ce(sat) (v)
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 5 of 7 mar 09, 2011 gate registance rg () (inductive load) gate registance rg () (inductive load) swithing energy losses e () switching ti mes t (ns) swithing energy losses e () collector current i c (a) (inductive load) switching characteristics ( typical) (1) switching characteristics ( typical) (2) switching characteristics ( typical) (3) switching characteristics ( typical) (4) collector current i c (a) (inductive load) switching ti mes t (ns) 100 1000 10 2 50 2010 5 2 50 2010 5 2 50 2010 5 2 5 0 100 2010 5 10 100 1000 t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v i c = 17 a, t a = 25 c v cc = 300 v, v ge = 15 v i c = 17 a, t a = 25 c eoff eon v cc = 300 v, v ge = 15 v rg = 5 a = 25 c 10000 1000 100 10 eoff eon 1 100 10 1000 v cc = 300 v, v ge = 15 v rg = 5 a = 25 c t d(off) t d(on) t f t r
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 6 of 7 mar 09, 2011 0.01 1 0.1 10 10 m 100 m1 0 1 100 pw (s) c (c/w) thermal impedance vs. pulse width tc = 25c single pulse 100 1 m 10 m 100 m1 0 1 100 100 1 m 10 1 0.1 0.01 pw (s) t ransient thermal impedance junction to case (diode) c (c/w) tc = 25c single pulse switching time test circuit waveform diode clamp/ d.u.t d.u.t/ driver rg l v cc 10% t f tr t d(off) t d(on) ic vin 90% 90% 90% 10% 10% t on t off
RJH60D3DPP-M0 preliminary r07ds0162ej0300 rev.3.00 page 7 of 7 mar 09, 2011 package dimension unit: mm p revious c od e pr ss0003 af- a t o -22 0 f l mass[t y p. ] 1.5 g ? jeita packa g e code packa g e nam e t o -22 0 f l 3.6 0.3 15.0 0.3 12.5 0.5 10.0 0.3 6.5 0.3 75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part no. quantity shipping container RJH60D3DPP-M0-t2 1050 pcs box (tube)
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